BCY70, PNP, Bipolar, Transistor, ,Silicon, 200 mA, 40 V, 3-Pin, TO-18,
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BCY70, PNP, Bipolar, Transistor, ,Silicon, 200 mA, 40 V, 3-Pin, TO-18, BCY70, PNP, Bipolar, Transistor, ,Silicon, 200 mA, 40 V, 3-Pin, TO-18,

BCY70, PNP, Bipolar, Transistor, ,Silicon, 200 mA, 40 V, 3-Pin, TO-18,

  • £0.55


BCY70, PNP, Bipolar, Transistor, ,Silicon, 200 mA, 40 V, 3-Pin, TO-18,

 

Attribute Value
Transistor Type PNP
Maximum DC Collector Current 200 mA
Maximum Collector Emitter Voltage 40 V
Package Type TO-18
Mounting Type Through Hole
Maximum Power Dissipation 350 mW
Minimum DC Current Gain 15
Maximum Collector Base Voltage -50 V
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 250 MHz
Pin Count 3
Number of Elements per Chip 1
Diameter 5.84mm
Maximum Base Emitter Saturation Voltage -0.6 V
Minimum Operating Temperature -65 °C
Height 5.33mm
Maximum Operating Temperature +200 °C
Dimensions 5.84 (Dia.) x 5.33mm
Maximum Collector Emitter Saturation Voltage -0.5 V

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