2N3904, NPN, Transistor, NOS
- 2N3904 NPN Transistor, NOS
-
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10μA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10μA, IC = 0
6.0
V
IBL
Base Cutoff Current
VCE = 30V, VEB = 3V
50
nA
ICEX
Collector Cutoff Current
VCE = 30V, VEB = 3V
50
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1mA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V
40
70 100 60 30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
0.2 0.3
V V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
0.65
0.85 0.95
V V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10mA, VCE = 20V, f = 100MHz
300
MHz
Cobo
Output Capacitance
VCB = 5.0V, IE = 0, f = 1.0MHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
8.0
pF
NF
Noise Figure
IC = 100μA, VCE = 5.0V, RS = 1.0kΩ,
f = 10Hz to 15.7kHz5.0
dB
SWITCHING CHARACTERISTICS
td
Delay Time
VCC = 3.0V, VBE = 0.5V IC = 10mA, IB1 = 1.0mA
35
ns
tr
Rise Time
35
ns
ts
Storage Time
VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
200
ns
tf
Fall Time
50
ns
